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Chung, Il-Sug
Nano-Optoelectronics Lab.
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High-index-contrast subwavelength grating VCSEL

Author(s)
Gilet, PhilippeOlivier, NicolasGrosse, PhilippeGilbert, KarenChelnokov, AlexeiChung, Il-SugMørk, Jesper
Issued Date
2010-01-27
DOI
10.1117/12.840884
URI
https://scholarworks.unist.ac.kr/handle/201301/37425
Fulltext
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/7615/1/High-index-contrast-subwavelength-grating-VCSEL/10.1117/12.840884.full
Citation
Vertical-Cavity Surface-Emitting Lasers XIV, v.7615
Abstract
In this article, we report our results on 980nm high-index-contrast subwavelength grating (HCG) VCSELs for optical interconnection applications. In our structure, a thin undoped HCG layer replaces a thick p-type Bragg mirror. The HCG mirror can feasibly achieve polarization-selective reflectivities close to 100%. The investigated structure consists of a HCG mirror with an underneath λ/4-thick oxide gap, four p-type GaAlAs/GaAs pairs for current spreading, three InGaAs/GaAs quantum wells, and an n-type GaAlAs/GaAs Bragg mirror. The HCG structure was defined by e-beam lithography and dry etching. The current oxide aperture and the oxide gap underneath the HCG were simultaneously formed by the selective wet oxidation process. Compared to air-gap high contrast grating mirrors demonstrated elsewhere, our grating mirrors are particular since they are supported by thinner λ/4 aluminium oxide layer, and thus are mechanically robust and thinner than usual designs. Sub-milliamp threshold currents and single-transverse-mode operation was obtained. A hero device exhibited maximum singlemode output power of more than 4 mW at room temperature and 1 mw at 70°C, which are the highest values ever reported from the HCG structures. These results build a bridge between a standard VCSEL and a hybrid laser on silicon, making them of potential use for the realization of silicon photonics.
Publisher
Vertical-Cavity Surface-Emitting Lasers XIV

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