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박혜성

Park, Hyesung
Future Electronics and Energy Lab
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Minimization of Water Molecule Trapping at Graphene/Substrate Interface Using Dry Transfer with Flexible Supporting Layer

Author(s)
Jung, SungchulYoon, Hoon HahnJin, HanbyulMo, KyuhyungChoi, GahyunLee, JunghyunPark, HyesungPark, Kibog
Issued Date
2018-04-25
URI
https://scholarworks.unist.ac.kr/handle/201301/36548
Citation
2018 한국물리학회 봄 학술논문발표회
Abstract
CVD graphene has been usually transferred by using PMMA-assisted wet transfer method relying on its simplicity and good coverage. During the wet transfer process, however, water molecules can be trapped between the substrate and graphene layer. Generally, the CVD graphene transferred on SiO2 substrate is p-doped and the trapped water molecules enhance the p-doping of graphene. Moreover, the trapped water molecules also cause the unwanted hysteric current-voltage behaviors of the field effect transistor (FET) based on the transferred graphene. In this work, a simple but quite efficient dry transfer method adopting an additional flexible supporting layer attached to the PMMA-graphene stack is demonstrated. A commercial Kapton tape is used as the flexible supporting layer. N2 blowing and heating processes are preceded before transferring graphene on the substrate. The dry-transferred graphene is found to have much smaller doping and hysteric behavior compared to the conventional wet-transferred graphene. Furthermore, the carrier mobility is also found to be improved noticeably from the operational performances of fabricated FETs. Our dry transfer method is readily applicable for transferring graphene onto large-scale substrate with both minimized water-molecule-trapping at interface and good coverage throughout the entire substrate.
Publisher
한국물리학회

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