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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Negative Differential Resistance Devices with Ultra-High-Peak-to-Valley Current Ratio Based on Silicon Nanowire Structure
- Author(s)
- Kim, Kyung Rok, Shin, Sunhae, Ryu, Min Woo
- Issued Date
- 2012-06-10
- Citation
- 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
- Abstract
- Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 10 4 based on silicon nanowire structure.
- Publisher
- 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
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