Simple and Accurate Capacitance Modeling of 32nm Multi-fin FinFET

Abstract

In this paper, we investigate capacitive effect of multi-fins FinFET using the TCAD simulations. The analysis of the capacitance change is performed for the fin pitch and height variation in 32nm single gate FinFET. The analysis results show, as expected, that the increasing fin pitch (Pfin) variation leads to decrease in the coupling capacitance. And increasing height of the fin (Hfin) leads to increase in the capacitive coupling and total gate capacitances. Simple and accurate coupling capacitance models for both pitch and height variations of the three fins FinFET are proposed and verified with TCAD results.