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Shin, Hyeon Suk
Lab for Carbon and 2D Materials
Research Interests
  • Two-dimensional materials: graphene, transition metal dichalcogenides, h-BN, and their heterostructures

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Facile Method for rGO Field Effect Transistor: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction

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Title
Facile Method for rGO Field Effect Transistor: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction
Author
Yang, JieunKim, Jung-WooShin, Hyeon Suk
Issue Date
2012-05
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.24, no.17, pp.2299 - 2303
Abstract
A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.
URI
https://scholarworks.unist.ac.kr/handle/201301/3516
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84860337606
DOI
10.1002/adma.201104094
ISSN
0935-9648
Appears in Collections:
CHM_Journal Papers
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