40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Abstract
Photo-excited semiconductor switching system for fast control of millimeter wave is developed and tested with an oversized corrugated horn (D/ λ > 10) and quasi-optical mirror setup. Semi-insulating GaAs (100) having direct band-gap shows fast switch ON-OFF (<; 100 ns) whereas semi-insulating Si (100) having indirect band-gap shows fast switch ON (<; 100 ns) and slow switch OFF (<; 1 ms) for the millimeter-wave regime.
Publisher
40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015