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BielawskiChristopher W

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Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement

Author(s)
Yum, Jung HwanBersuker, GennadiAkyol, TarikFerrer, D. A.Lei, MingPark, Keun WooHudnall, Todd W.Downer, Mike C.Bielawski, Christopher W.Yu, Edward T.Price, JimmyLee, Jack C.Banerjee, Sanjay K.
Issued Date
2011-12
DOI
10.1109/TED.2011.2170073
URI
https://scholarworks.unist.ac.kr/handle/201301/33170
Fulltext
https://ieeexplore.ieee.org/document/6058642
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.12, pp.4384 - 4392
Abstract
In a previous study, we demonstrated that the BeO film grown by atomic layer deposition (ALD) on Si and III-V metal-oxide-semiconductor devices has excellent electrical and physical characteristics. In this paper, we discuss the physical and electrical properties of ALD BeO as an oxygen diffusion barrier on scaled 4-nm HfO2/BeO gate stacks. Thin BeO layers are deposited onto (100) p-Si substrates as an alternative to SiO2 as an interfacial passivation layer (IPL). X-ray photoelectron spectroscopy and transmission electron microscopy show that the BeO IPL acts as an effective oxygen barrier against SiOx native oxide formation during postdeposition annealing (PDA). The use of ALD BeO as an oxygen diffusion barrier results in lower equivalent oxide thickness, more competitive leakage current, and better reliability characteristics after PDA than Al2O3 and HfO2 gate stacks.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN
0018-9383
Keyword (Author)
Atomic-layer-deposited (ALD) beryllium oxide (BeO)beryllium oxide (BeO) interfacial layer passivation (IPL)oxygen diffusion barrier
Keyword
ATOMIC-FORCE MICROSCOPYQUANTUM DOTSVOLTAGEAL2O3

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