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민승규

Min, Seung Kyu
Theoretical/Computational Chemistry Group for Excited State Phenomena
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Effect of Pt Crystal Surface on Hydrogenation of Monolayer h-BN and Its Conversion to Graphene

Author(s)
Kim, MinsuMoon, Sung WookKim, GwangwooYoon, Seong InKim, KicheolMin, Seung KyuShin, Hyeon Suk
Issued Date
2020-06
DOI
10.1021/acs.chemmater.0c00736
URI
https://scholarworks.unist.ac.kr/handle/201301/33080
Fulltext
https://pubs.acs.org/doi/10.1021/acs.chemmater.0c00736
Citation
CHEMISTRY OF MATERIALS, v.32, no.11, pp.4584 - 4590
Abstract
The proximity effect of physical quantities like catalysis and wettability is a very interesting and fundamental topic to be studied. However, studies on the catalyst proximity-induced hydrogenation of h-BN are limited. In this study, we report the proximity effect of a Pt substrate on the hydrogenation of h-BN. We analyzed the degree of hydrogenation of monolayer h-BN (1L h-BN) on various Pt single-crystal surfaces via hydrogen plasma treatment; the degree of hydrogenation follows the order Pt(110) < Pt(111) < Pt(100). It was revealed that the catalytic activity of the Pt substrate inducing hydrogenation is related to the difference in the adsorption energy of hydrogen owing to the Pt surface orientation. The corrugated texture of h-BN was formed by the arrangement of h-BN on the Pt surface, referred to as the h-BN nanomesh. The h-BN nanomesh on the Pt surface consists of two regions: the "pores" are regions close to the substrate and the "wires" are loosely bound to the substrate. Finally, our experimental and density functional theory calculation results indicated that hydrogenation proceeded on the top side of the h-BN layer in the pore regions and is affected by Pt crystal surfaces. The same tendency was also observed during the conversion of h-BN to graphene on three different Pt crystals, indicating that the conversion process is related to the proximity effect to the Pt substrate.
Publisher
AMER CHEMICAL SOC
ISSN
0897-4756
Keyword
HEXAGONAL BORON-NITRIDELARGE-AREATRANSPARENCYGROWTH

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