Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates

Abstract

We developed a patternable synthesis method of wafer-scale NbS2, which can be applied for the fabrication of source and drain electrodes of p-and n-type organic field-effect transistors (OFETs) and logic gates. NbS2 film with high uniformity was synthesized directly on a 2-in Si wafer. NbS2 patterns of various sizes and shapes were readily synthesized onto an entire wafer. OFETs with NbS2 electrodes exhibited superior performances to those with conventional metal electrodes. The superior performance of the former OFETs was primarily a result of the enhanced crystallinity of the organic semiconductor layer deposited onto the NbS2 electrode surface. Furthermore, organic complementary circuits such as NOT, NAND, and NOR gates were successfully assembled using the resulting OFETs as a proof of applicability of these devices to complex logic circuits.