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NVWAL: Exploiting NVRAM in write-ahead logging

Author(s)
Kim, Wook-HeeKim, JinwoongBaek, WoongkiNam, BeomseokWon, Youjip
Issued Date
2016-04-02
DOI
10.1145/2872362.2872392
URI
https://scholarworks.unist.ac.kr/handle/201301/32806
Fulltext
http://dl.acm.org/citation.cfm?doid=2872362.2872392
Citation
Architectural Support for Programming Languages and Operating Systems, pp.385 - 398
Abstract
Emerging byte-addressable non-volatile memory is considered an alternative storage device for database logs that require persistency and high performance. In this work, we develop NVWAL (NVRAM Write-Ahead Logging) for SQLite. The proposed NVWAL is designed to exploit byteaddressable NVRAM to maintain the write-ahead log and to guarantee the failure atomicity and the durability of a database transaction. The contribution of NVWAL consists of three elements: (i) byte-granularity differential logging that effectively eliminates the excessive I/O overhead of filesystem-based logging or journaling, (ii) transactionaware lazy synchronization that reduces cache synchronization overhead by two-thirds, and (iii) user-level heap management of the NVRAM persistent WAL structure, which reduces the overhead of managing persistent objects. We implemented NVWAL in SQLite and measured the performance on a Nexus 5 smartphone and an NVRAM emulation board - Tuna. Our performance study shows the following: (i) the overhead of enforcing strict ordering of NVRAM writes can be reduced via NVRAM-aware transaction management. (ii) From the application performance point of view, the overhead of guaranteeing failure atomicity is negligible; the cache line flush overhead accounts for only 0.8∼4.6% of transaction execution time. Therefore, application performance is much less sensitive to the NVRAM performance than we expected. Decreasing the NVRAM latency by one-fifth (from 1942 nsec to 437 nsec), SQLite achieves a mere 4% performance gain (from 2517 ins/sec to 2621 ins/sec). (iii) Overall, when the write latency of NVRAM is 2 usec, NVWAL increases SQLite performance by at least 10x compared to that of WAL on flash memory (from 541 ins/sec to 5812 ins/sec).
Publisher
Association for Computing Machinery

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