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DC Field | Value | Language |
---|---|---|
dc.citation.number | 5 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 6 | - |
dc.contributor.author | Das, Tanmoy | - |
dc.contributor.author | Seo, Dongwook | - |
dc.contributor.author | Seo, Jae Eun | - |
dc.contributor.author | Chang, Jiwon | - |
dc.date.accessioned | 2023-12-21T17:38:58Z | - |
dc.date.available | 2023-12-21T17:38:58Z | - |
dc.date.created | 2020-05-04 | - |
dc.date.issued | 2020-05 | - |
dc.description.abstract | The thickness-modulated phase transition from semi-metallic (bulk) to semiconductor (a few layers) is the most unique property of pentagonal palladium diselenide (PdSe2). Thus, precise thickness tailoring is essential to fully utilize its unique thickness-dependent property for exotic device applications. Here, tunable current transport in PdSe2 based field-effect transistors (FETs) enabled by layer-by-layer thinning of PdSe2 using mild SF6:N-2 plasma is presented. With this top-down plasma-etching method, the PdSe2 layer thickness can be precisely modulated without structural degradation, which paves the way to realize the complete potential of PdSe2-based devices. By modifying the plasma power and exposure time, an atomic layer precision etching rate of 0.4 nm min(-1) can be achieved. Atomic-force microscopy, Raman spectroscopy, and secondary ion mass spectrometry confirm the uniform and complete removal of top layers of PdSe2 flake over a large area without affecting remaining bottom layers. Electrical characterization of current transport in plasma-thinned PdSe2 FETs reveals excellent layer-dependent conductivity similar to pristine PdSe2 FETs. This simple but highly scalable and controllable plasma-etching technique provides a promising way to fabricate PdSe2 devices based on lateral heterostructures composed of different thicknesses PdSe2 flakes to exploit strongly thickness-dependent electronic structures. | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.6, no.5 | - |
dc.identifier.doi | 10.1002/aelm.202000008 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.scopusid | 2-s2.0-85083374410 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/32047 | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202000008 | - |
dc.identifier.wosid | 000525920800001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY | - |
dc.title | Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | layer-dependent transport | - |
dc.subject.keywordAuthor | palladium diselenide | - |
dc.subject.keywordAuthor | plasma etching | - |
dc.subject.keywordAuthor | thickness modulation | - |
dc.subject.keywordPlus | MOS2 | - |
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