Fabrication of perovskite solar cell with high short-circuit current density (J(SC)) using moth-eye structure of SiOX

Abstract

The performance of solar cells is determined by three factors: the open-circuit voltage (V-OC), short-circuit current density (J(SC)), and fill factor (FF). The V-OC and FF are determined by the material bandgap and the series/shunt resistance, respectively. However, J(SC) is determined by the amount of incident light in addition to the bandgap of the material. In this study, a moth-eye pattern was formed on a glass surface via direct printing to increase the amount of incident light and thus increase J(SC). The moth-eye pattern is a typical antireflection pattern that reduces the reflection by gradually increasing the refractive index. A flat perovskite solar cell (F-PSC) and a moth-eye patterned perovskite solar cell (M-PSC) had J(SC) values of 23.70 and 25.50 mA/cm(2), respectively. The power-conversion efficiencies of the F-PSC and M-PSC were 19.81% and 21.77%, respectively.