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Fabrication of vertical van der Waals gap array using single-and multi-layer graphene

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Title
Fabrication of vertical van der Waals gap array using single-and multi-layer graphene
Author
Kim, SunghwanBahk, Young-MiKim, DasomYun, HyeongSeokLim, Yi RangSong, WooseokKim, Dai-Sik
Issue Date
2020-01
Publisher
Institute of Physics Publishing
Citation
NANOTECHNOLOGY, v.31, no.3, pp.035304
Abstract
y Arrays of van der Waals gaps were manufactured by synthesizing the vertically aligned graphene layer stacked between two copper (Cu) catalytic films. The Cu-graphene-Cu laminated structure was obtained by directly synthesizing graphene on a patterned Cu film followed by depositing a second copper layer for optical measurements. The synthesis of graphene on the Cu surface was optimized by adjusting the synthesis temperatures and pre-annealing time using plasma enhanced chemical vapor deposition (PECVD). Resonant Raman spectroscopy measurements reveal that graphene can be synthesized on both bulk Cu foil and relatively thin Cu film under the same growth mechanism using PECVD. Structural and optical characterizations of the array of graphene van der Waals gaps were implemented by the transmission electron microscope and terahertz-time domain spectroscopy (THz-TDS). In THz-TDS, the measured THz amplitude transmitted through the graphene van der Waals gap slit array was constant regardless of the gap width determined by the number of graphene layers between the Cu thin films in a single slit. These results imply that the optical dielectric constant of graphene at THz frequencies in the out-of-plane direction is linearly proportional to the gap width. Our results of the manufacturing method can be adopted to investigate mechanical, electrical, and optical properties of other 2D materials such as h-BN, MoS2, and others. Furthermore, metal-graphene-metal structures with vertical orientations can be used in many electronic, optic, and optoelectronic applications.
URI
https://scholarworks.unist.ac.kr/handle/201301/31898
URL
https://iopscience.iop.org/article/10.1088/1361-6528/ab3dd2
DOI
10.1088/1361-6528/ab3dd2
ISSN
0957-4484
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