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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 510 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 506 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 10 | - |
dc.contributor.author | Sim, Kyoseung | - |
dc.contributor.author | Choi, Youngill | - |
dc.contributor.author | Kim, Hyojoong | - |
dc.contributor.author | Cho, Sungwoo | - |
dc.contributor.author | Yoon, Sung Cheol | - |
dc.contributor.author | Pyo, Seungmoon | - |
dc.date.accessioned | 2023-12-22T08:06:33Z | - |
dc.date.available | 2023-12-22T08:06:33Z | - |
dc.date.created | 2020-03-17 | - |
dc.date.issued | 2009-05 | - |
dc.description.abstract | Solution processable organic thin-film transistors (OTFTs) were fabricated using 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) and low-temperature processable polyimide gate dielectric. The TIPS-pentacene OTFT with the dielectric was found to have a field-effect mobility of 0.15 cm(2)/Vs, which is comparable to that of OTFT with an inorganic dielectric. The OTFTs with the polyimide dielectric did not show any significant performance degradation as time passed. A field-effect mobility of the OTFTs in 60 days was found to be almost identical to that of pristine OTFT. The combination of TIPS-pentacene and our polyimide gate dielectric can be one of the potential candidates for the fabrication of stable OTFTs for large-area flexible electronics. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.10, no.3, pp.506 - 510 | - |
dc.identifier.doi | 10.1016/j.orgel.2008.12.016 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.scopusid | 2-s2.0-62649135524 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31616 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1566119908002589 | - |
dc.identifier.wosid | 000266000700022 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Soluble pentacene thin-film transistor using a high solvent and heat resistive polymeric dielectric with low-temperature processability and its long-term stability | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Organic thin film transistors | - |
dc.subject.keywordAuthor | Soluble pentacene | - |
dc.subject.keywordAuthor | Polyimide | - |
dc.subject.keywordAuthor | Gate dielectric | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | FUNCTIONALIZED PENTACENE | - |
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