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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 81 | - |
dc.citation.startPage | 76 | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 56 | - |
dc.contributor.author | Sim, Kyoseung | - |
dc.contributor.author | Na, Hanah | - |
dc.contributor.author | Park, Junyong | - |
dc.contributor.author | Lee, Junghyun | - |
dc.contributor.author | Do, Junghwan | - |
dc.contributor.author | Pyo, Seungmoon | - |
dc.date.accessioned | 2023-12-21T20:42:40Z | - |
dc.date.available | 2023-12-21T20:42:40Z | - |
dc.date.created | 2020-03-17 | - |
dc.date.issued | 2018-05 | - |
dc.description.abstract | High-quality rubrene crystals were directly grown on a polymeric gate dielectric-coated ITO/glass substrate by a simple solution process. Organic field-effect transistors were fabricated based on these rubrene crystals, and their electrical performance was investigated. Atomic force micrographs of the rubrene crystal reveal that its surface has a conventional terrace structure, confirming the well-ordered rubrene molecules. The organic transistor with the rubrene crystal shows the highest charge carrier hole mobility of 3.74 cm(2)/V.s that can be attributed to the strong p-p overlap between the adjacent rubrene molecules. The device shows a stable static and dynamic electrical stress response under ambient conditions. For evaluating the applicability of the transistor in a logic circuit, a simple load-type inverter is fabricated by combining the rubrene transistor and a 10 M Omega load-resistor, to achieve a clear dynamic switching response up to 100 Hz. | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.56, pp.76 - 81 | - |
dc.identifier.doi | 10.1016/j.orgel.2018.01.042 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.scopusid | 2-s2.0-85041540155 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31586 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1566119918300429 | - |
dc.identifier.wosid | 000428026000013 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | High-performance organic transistors based on solution-processed rubrene crystals directly grown on a polymeric dielectric | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Organic field-effect transistor | - |
dc.subject.keywordAuthor | Solution process | - |
dc.subject.keywordAuthor | Polymer gate dielectric | - |
dc.subject.keywordAuthor | Rubrene crystal | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | SINGLE-CRYSTALS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | ENERGY | - |
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