Newly Developed Broadband Antireflective Nanostructures by Coating a Low-Index MgF2 Film onto a SiO2 Moth-Eye Nanopattern
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- Newly Developed Broadband Antireflective Nanostructures by Coating a Low-Index MgF2 Film onto a SiO2 Moth-Eye Nanopattern
- Yoo, Gang Yeol; Nurrosyid, Naufan; Lee, SeungJe; Jeong, Youngsoon; Yoon, Ilsun; Kim, Changwook; Kim, Woong; Jang, Sung-Yeon; Do, Young Rag
- Issue Date
- AMER CHEMICAL SOC
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.9, pp.10626 - 10636
- A newly developed nanopatterned broadband antireflective (AR) coating was fabricated on the front side of a glass/indium tin oxide/perovskite solar cell (PSC) by depositing a single interference layer onto a two-dimensional (2D)-patterned moth-eye-like nanostructure. The optimized developed AR nanostructure was simulated in a finite-difference time domain analysis. To realize the simulated developed AR nanostructure, we controlled the SiO2 moth-eye structure with various diameters and heights and a MgF2 single layer with varying thicknesses by sequentially performing nanosphere lithography, reactive ion etching, and electron-beam evaporation. Optimization of the developed AR nanostructure, which has a 100 nm-thick MgF2 film coated onto the SiO2 moth-eye-like nanostructure (diameter 165 nm and height 400 nm), minimizes the reflection loss throughout the visible range. As a result, the short-circuit current density (JSC) of the newly AR-coated PSC increases by 11.80%, while the open-circuit voltage (VOC) remains nearly constant. Therefore, the power conversion efficiency of the newly developed AR-decorated PSC increases by 12.50%, from 18.21% for a control sample to 20.48% for the optimum AR-coated sample. These results indicate that the newly developed MgF2/SiO2 AR nanostructure can provide an advanced platform technology that reduces the Fresnel loss and therefore increases the possibility of the commercialization of glass-based PSCs.
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