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- Ding, Feng
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Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films
- Author(s)
- Chang, Haixin, Sun, Zhenhua, Yuan, Qinghong, Ding, Feng, Tao, Xiaoming, Yan, Feng, Zheng, Zijian
- Issued Date
- 2010-11
- Citation
- ADVANCED MATERIALS, v.22, no.43, pp.4872 - 4876
- Abstract
- Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.
- Publisher
- WILEY-V C H VERLAG GMBH
- ISSN
- 0935-9648
- Keyword
- TRANSPORT-PROPERTIES, TRANSPARENT, ELECTRODES, DEPOSITION, COMPOSITE
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