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Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth

Author(s)
Shu, HaiboChen, XiaoshuangTao, XiaomingDing, Feng
Issued Date
2012-04
DOI
10.1021/nn300726r
URI
https://scholarworks.unist.ac.kr/handle/201301/31369
Fulltext
https://pubs.acs.org/doi/10.1021/nn300726r
Citation
ACS NANO, v.6, no.4, pp.3243 - 3250
Abstract
The energetics and growth kinetics of graphene edges during CVD growth on Cu(111) and other catalyst surfaces are explored by density functional theory (DFT) calculations. Different from graphene edges In vacuum, the reconstructions of both armchair (AC) and zigzag (ZZ) edges are energetically less stable because of the passivation of the edges by the catalytic surface. Furthermore, we predicated that, on the most used Cu(111) catalytic surface, each AC-like site on the edge is intended to be passivated by a Cu atom. Such an unexpected passivation significantly lowers the barrier of Incorporating carbon atoms onto the graphene edge from 2.5 to 0.8 eV and therefore results in a very fast growth of the AC edge. These theoretical results are successfully applied to explain the broad experimental observations that the ZZ egde is the dominating edge type of growing graphene islands on a Cu surface.
Publisher
AMER CHEMICAL SOC
ISSN
1936-0851
Keyword (Author)
graphenechemical vapor depositionedge reconstructiondensity functional theory
Keyword
ELECTRONIC-PROPERTIESGRAIN-BOUNDARIES

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