The edge termination controlled kinetics in graphene chemical vapor deposition growth

Abstract

Understanding the kinetics of graphene chemical vapor deposition (CVD) growth is crucial for desired graphene growth. Depending on the partial pressure of hydrogen in the carrier gas, the temperature and the type of substrate, both armchair (AC) and zigzag (ZZ) edges of graphene can be either passivated by a metal surface or terminated by hydrogen atoms. Owing to the large barrier for incorporating C atoms, the growth rate of H terminated graphene edges is significantly slower than that of metal surface passivated ones. Based on this understanding, various behaviours and the kinetics of graphene growth at different temperatures, H-2 pressure and on various catalyst surfaces are satisfactorily explained and the strategy of growing edge-controlled graphene domains is predicated.