Atomistic simulation of the growth of defect-free carbon nanotubes

Abstract

Atomistic simulation of defect-free single-walled carbon nanotube (SWCNT) growth is essential for the insightful understanding of the SWCNT's growth mechanism. Despite the extensive effort paid in the past two decades, the goal has not been completely achieved, due to the huge timescale discrepancy between atomistic simulation and the experimental synthesis of SWCNTs, as well as the lack of an accurate classical potential energy surface for large scale simulation. Here, we report atomistic simulations of defect-free SWCNT growth by using a new generation of carbon-metal potential and a hybrid method, in which a basin-hopping strategy is applied to facilitate the defect healing during the simulation. The simulations reveal a narrow diameter distribution and an even chiral angle distribution of the growth of SWCNTs from liquid catalyst, which is in agreement with most known experimental observations.