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정건욱

Chung, Kunook
Mixed Dimensional Materials and Devices Lab.
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A tensorial shear stress sensor based on light-emitting GaN nanopillars

Author(s)
Sui, JingyangChung, KunookTian, FengKu, Pei-Cheng
Issued Date
2019-07
DOI
10.1063/1.5111129
URI
https://scholarworks.unist.ac.kr/handle/201301/30816
Fulltext
https://aip.scitation.org/doi/10.1063/1.5111129
Citation
APPLIED PHYSICS LETTERS, v.115, no.2, pp.021103
Abstract
A force sensor capable of detecting both the magnitude and direction of the shear stress is proposed and demonstrated. The structure is based on an array of gallium nitride (GaN) light-emitting nanostructures and an off-the-shelf imager. The directional sensitivity originates from symmetry breaking of the nanostructures. Only a common bias is required for all GaN elements, making two-dimensional mapping of the stress relatively simple. As the stress sensing relies only on differential measurements, no stringent uniformity requirement across the sensor array is necessary.
Publisher
American Institute of Physics
ISSN
0003-6951
Keyword
TACTILE SENSOR

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