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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Direct Epitaxial Synthesis of Selective Two-Dimensional Lateral Heterostructures

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Title
Direct Epitaxial Synthesis of Selective Two-Dimensional Lateral Heterostructures
Author
Lee, JuwonPak, SangyeonLee, Young-WooPark, YoungsinJang, A-RangHong, JohnCho, YuljaeHou, BoLee, SanghyoJeong, Hu YoungShin, Hyeon SukMorris, Stephen M.Cha, SeungNamSohn, Jung InnKim, Jong Min
Issue Date
2019-11
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.13, no.11, pp.13047 - 13055
Abstract
Two-dimensional (2D) heterostructured or alloyed monolayers composed of transition metal dichalcogenides (TMDCs) have recently emerged as promising materials with great potential for atomically thin electronic applications. However, fabrication of such artificial TMDC heterostructures with a sharp interface and a large crystal size still remains a challenge because of the difficulty in controlling various growth parameters simultaneously during the growth process. Here, a facile synthetic protocol designed for the production of the lateral TMDC heterostructured and alloyed monolayers is presented. A chemical vapor deposition approach combined with solution-processed precursor deposition makes it possible to accurately control the sequential introduction time and the supersaturation levels of the vaporized precursors and thus reliably and exclusively produces selective and heterogeneous epitaxial growth of TMDC monolayer crystals. In addition, TMDC core/shell heterostructured (MoS2/alloy, alloy/WS2) or alloyed (Mo1-xWxS2) monolayers are also easily obtained with precisely controlled growth parameters, such as sulfur introduction timing and growth temperature. These results represent a significant step toward the development of various 2D materials with interesting properties.
URI
https://scholarworks.unist.ac.kr/handle/201301/30812
URL
https://pubs.acs.org/doi/10.1021/acsnano.9b05722
DOI
10.1021/acsnano.9b05722
ISSN
1936-0851
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PHY_Journal Papers
UCRF_Journal Papers
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