Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs

Abstract

Recently, mono-elemental 2-D material black arsenic (BA), related to black phosphorus (BP), with better ambient stability and possibly higher mobility than BP has been demonstrated as a channel material in metal-oxide- semiconductor field effect transistors (MOSFETs). Here, we present a theoretical study on ballistic current transport in n- and p-MOSFETs based on monolayer BA. Monolayer BA has very similar band structures with monolayer BP which is characterized by the highly anisotropic Γ valley, but with the addition of other degenerate valleys (Δ valleys) near Γ valley. We examine the role of Γ and Δ valleys in current transport of monolayer BA MOSFETs through valley-resolved quantum transport simulations. The effects of different transport directions and the device scaling are also discussed with the benchmarking against monolayer BP MOSFETs.