MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.53, no.2, pp.471 - 473
Abstract
This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to he only 1.4%.