Selective formation of thickness-controlled fullerene disks by vapor-solid process
Cited 0 times inCited 0 times in
- Selective formation of thickness-controlled fullerene disks by vapor-solid process
- Ahn, Seong Joon; Yang, Jieun; Lim, Kwan Woo; Shin, Hyeon Suk
- A1. Nanostructure; A2. Growth from vapor; A3. Chemical vapor deposition processes; B1. Fullerenes
- Issue Date
- ELSEVIER SCIENCE BV
- JOURNAL OF CRYSTAL GROWTH, v.363, no., pp.141 - 144
- Thin C-60 disks were selectively prepared without any solvent using a vapor-solid process. A tube furnace with three separate heating zones was used. Controlling the substrate temperature and the vapor temperature made the selective formation of the thin C-60 disks possible. The temperature of the first and second zones for evaporation of C-60 was fixed at 650 degrees C, the temperature of the third zone at 500 degrees C, and the temperature of the substrate between 150 and 300 degrees C by water circulation through the sample stage. The thickness of the thin C-60 disks decreased as the substrate temperature increased in the range of 150-300 degrees C. This occurred because the growth rate of a crystal increases as the difference between the evaporation temperature and the substrate temperature (crystallization temperature) of the fullerene increases.
- ; Go to Link
- Appears in Collections:
- SNS_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.