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Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science

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N-type graphene induced by dissociative H-2 adsorption at room temperature

Cited 12 times inthomson ciCited 8 times inthomson ci
Title
N-type graphene induced by dissociative H-2 adsorption at room temperature
Author
Kim, Byung HoonHong, Sung JuBaek, Seung JaeJeong, Hu YoungPark, NoejungLee, MuyoungLee, Sang WookPark, MinChu, Seung WanShin, Hyeon SukLim, JeongminLee, Jeong ChulJun, YongseokPark, Yung Woo
Issue Date
2012-09
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.2, pp.690
Abstract
Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H-2 gas pressure up to 24 bar from 300 K to 345 K. Upon H-2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H-2 adsorption due to the existence of vacancy defects on graphene.
URI
https://scholarworks.unist.ac.kr/handle/201301/2819
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84867006832
DOI
10.1038/srep00690
ISSN
2045-2322
Appears in Collections:
CHM_Journal Papers
PHY_Journal Papers
UCRF_Journal Papers
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