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Kim, Seong-Jin
Bio-inspired Advanced Sensors Lab.
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Design of a Time-of-Flight Sensor with Standard Pinned-Photodiode Devices Towards 100 MHz Modulation Frequency

Author(s)
Lee, SeunghyunPark, DahwanLee, SangukChoi, JaehyukKim, Seong-Jin
Issued Date
2019-09
DOI
10.1109/ACCESS.2019.2940259
URI
https://scholarworks.unist.ac.kr/handle/201301/27452
Fulltext
https://ieeexplore.ieee.org/document/8832150
Citation
IEEE ACCESS, v.7, pp.130451 - 130459
Abstract
We present an indirect Time-of-Flight (ToF) sensor based on standard pinned-photodiode (PPD) devices and design guides to pave the way for the development of a ToF pixel operating at 100 MHz modulation frequency. The standard PPDs are established well as predominant devices for 2-D color imagers in these days because of their low noise characteristic, but slow transfer speed of photo-generated electrons still prevents them from being employed to 3-D depth imagers. Optimized PPD structure with no process modifications is introduced to create a lateral electric field for enhancing charge transfer speed inside the PPD, and essential design parameters for achieving high operating frequency such as the epitaxial layer thickness, the pinning voltage, and the threshold voltage of the transfer gates are discussed with TCAD simulation results in this paper. Prototype indirect ToF sensors with various structures and parameters were fabricated using a 0.11-μm standard CIS process and characterized fully. We successfully evaluated the demodulation contrast of each pixel at 10 to 75 MHz frequencies, figuring out the suitable conditions of the PPD-based pixel. The best pixel operating at 50 MHz frequency demonstrated a depth resolution of less than 13 mm and a linearity error of about 3.7% between 1 and 3 m distance with a zeroorder calibration. We believe further optimization of the ToF pixel incorporated with the PPD devices is possible to improve the performance, operating it towards 100 MHz modulation frequency.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN
2169-3536
Keyword (Author)
CMOS image sensordemodulation contrastdepth imageepitaxial layer thicknesslateral drift eldmodulation frequencyoptimizationpinned photodiodepinning voltagethree-dimensional (3-D)threshold voltagetime-of-ight (ToF)transfer gate
Keyword
CMOS IMAGE SENSORDEMODULATIONPIXELS

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