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- Jeong, Hongsik
- Future Semiconductor Technology Lab.
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Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer
- Author(s)
- Lee, Yun Ki, Chun, Byong Sun, Kim, Young Keun, Hwang, Injun, Park, Wanjun, Kim, Taewan, Jeong, Won-Cheol, Lee, J., Jeong, Hong Sik
- Issued Date
- 2005-10
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.41, no.10, pp.2688 - 2690
- Abstract
- The array of synthetic antiferromagnetic magnetic tunnel junctions (MTJs) consisting of the TiN/PtMn (15 nm)/CoFe (1.5 nm)/Ru (0.8 nm)/CoFe (1.5 nm)/AIO (1.2 nm)/NiFe (t(1) nm)/Ru (0.8 nm)/NiFe 42 nm)Ta (10 nm)/TiN structure was fabricated into submicrometer dimensions. Magnetization switching field and magnetic domain structure were investigated by micromagnetic modeling as well as remanent magnetoresistive measurement. Domain structure was investigated to understand switching characteristics. The switching field depends on the thicknesses difference of two magnetic layers consisting of SAF free layer structure. When the thickness difference became 1.5 nm, the switching field was reduced to around 20 Oe with improved squareness.
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- ISSN
- 0018-9464
- Keyword (Author)
- magnetic tunnel junction, MRAM, switching field, synthetic antiferromagnet
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