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Suh, Joonki
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Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures

Author(s)
Liu, KaiYan, QiminChen, MichelleFan, WenSun, YinghuiSuh, JoonkiFu, DeyiLee, SangwookZhou, JianTongay, SefaattinJi, JieNeaton, Jeffrey B.Wu, Junqiao
Issued Date
2014-09
DOI
10.1021/nl501793a
URI
https://scholarworks.unist.ac.kr/handle/201301/27103
Fulltext
https://pubs.acs.org/doi/10.1021/nl501793a
Citation
NANO LETTERS, v.14, no.9, pp.5097 - 5103
Abstract
Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components in industrial-scale flexible devices and building blocks of 2D van der Waals heterostructures. However, their mechanical and elastic properties have not been fully characterized. Here we report high 2D elastic moduli of CVD monolayer MoS2 and WS2 (similar to 170 N/m), which is very close to the value of exfoliated MoS2 monolayers and almost half the value of the strongest material, graphene. The 2D moduli of their bilayer heterostructures are lower than the sum of 2D modulus of each layer, but comparable to the corresponding bilayer homostructure, implying similar interactions between the hetero monolayers as between homo monolayers. These results not only provide deep insight to understanding interlayer interactions in 2D van der Waals structures, but also potentially allow engineering of their elastic properties as desired.
Publisher
AMER CHEMICAL SOC
ISSN
1530-6984
Keyword (Author)
Molybdenum disulfidetungsten disulfidemonolayerelastic modulusheterostructures
Keyword
THIN-FILM TRANSISTORSLARGE-AREALAYERSGROWTHFABRICATIONGRAPHENE

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