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Suh, Joonki
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Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Author(s)
Kim, EunpaKo, ChanghyunKim, KyunghoonChen, YabinSuh, JoonkiRyu, Sang-GilWu, KediMeng, XiuqingSuslu, AslihanTongay, SefaattinWu, JunqiaoGrigoropoulos, Costas P.
Issued Date
2016-01
DOI
10.1002/adma.201503945
URI
https://scholarworks.unist.ac.kr/handle/201301/27095
Fulltext
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201503945
Citation
ADVANCED MATERIALS, v.28, no.2, pp.341 - 346
Abstract
Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword
LAYER MOS22-DIMENSIONAL SEMICONDUCTORSPHOTOLUMINESCENCETRANSITIONWSE2FABRICATIONADSORPTIONMOBILITYPH3

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