High-Performance Near-Infrared Absorbing n-Type Porphyrin Acceptor for Organic Solar Cells

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Title
High-Performance Near-Infrared Absorbing n-Type Porphyrin Acceptor for Organic Solar Cells
Author
Hadmojo, Wisnu TantyoLee, Un-HakYim, DajeongKim, Hyun WooJang, Woo-DongYoon, Sung CheolJung, In HwanJang, Sung-Yeon
Issue Date
2018-12
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.10, no.48, pp.41344 - 41349
Abstract
While the outstanding charge transport and sunlight harvesting properties of porphyrin molecules are highly attractive as active materials for organic photovoltaic (OPV) devices, the development of n-type porphyrin-based electron acceptors has been challenging. In this work, we developed a high-performance porphyrin-based electron acceptor for OPVs by substitution of four naphthalene diimide (NDI) units at the perimeter of a Zn-porphyrin (P-zn) core using ethyne linkage. Effective pi-conjugation between four NDI wings and the Pan core significantly broadened Q-band absorption to the near infrared region, thereby achieving the narrow band gap of 1.33 eV. Employing a windmill-structured tetra-NDI substituted P-zn-based acceptor (P-zn-TNDI) and mid-band gap polymer donor (PTB7-Th), the bulk heterojunction OPV devices achieved a power conversion efficiency (PCE) of 8.15% with an energy loss of 0.61 eV. The PCE of our P-zn-TNDI-based device was the highest among the reported OPVs using porphyrin-based acceptors. Notably, the amorphous characteristic of P-zn-TNDI enabled optimization of the device performance without using any additive, which should make industrial fabrication simpler and cheaper.
URI
https://scholarworks.unist.ac.kr/handle/201301/26755
URL
https://pubs.acs.org/doi/10.1021/acsami.8b14577
DOI
10.1021/acsami.8b14577
ISSN
1944-8244
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