High-Performance Near-Infrared Absorbing n-Type Porphyrin Acceptor for Organic Solar Cells
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- High-Performance Near-Infrared Absorbing n-Type Porphyrin Acceptor for Organic Solar Cells
- Hadmojo, Wisnu Tantyo; Lee, Un-Hak; Yim, Dajeong; Kim, Hyun Woo; Jang, Woo-Dong; Yoon, Sung Cheol; Jung, In Hwan; Jang, Sung-Yeon
- Issue Date
- AMER CHEMICAL SOC
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.48, pp.41344 - 41349
- While the outstanding charge transport and sunlight harvesting properties of porphyrin molecules are highly attractive as active materials for organic photovoltaic (OPV) devices, the development of n-type porphyrin-based electron acceptors has been challenging. In this work, we developed a high-performance porphyrin-based electron acceptor for OPVs by substitution of four naphthalene diimide (NDI) units at the perimeter of a Zn-porphyrin (P-zn) core using ethyne linkage. Effective pi-conjugation between four NDI wings and the Pan core significantly broadened Q-band absorption to the near infrared region, thereby achieving the narrow band gap of 1.33 eV. Employing a windmill-structured tetra-NDI substituted P-zn-based acceptor (P-zn-TNDI) and mid-band gap polymer donor (PTB7-Th), the bulk heterojunction OPV devices achieved a power conversion efficiency (PCE) of 8.15% with an energy loss of 0.61 eV. The PCE of our P-zn-TNDI-based device was the highest among the reported OPVs using porphyrin-based acceptors. Notably, the amorphous characteristic of P-zn-TNDI enabled optimization of the device performance without using any additive, which should make industrial fabrication simpler and cheaper.
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