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Composition change-driven texturing and doping in solution-processed SnSe thermoelectric thin films

Author(s)
Heo, Seung HwaeJo, SeungkiKim, Hyo SeokChoi, GaramSong, Jae YongKang, Jun-YunPark, No-JinBan, Hyeong WooKim, FredrickJeong, HyewonJung, JaeminJang, JaeyoungLee, Won BoShin, HosunSon, Jae Sung
Issued Date
2019-02
DOI
10.1038/s41467-019-08883-x
URI
https://scholarworks.unist.ac.kr/handle/201301/26484
Fulltext
https://www.nature.com/articles/s41467-019-08883-x
Citation
NATURE COMMUNICATIONS, v.10, no.1, pp.864
Abstract
The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe2 phase. We show that the strong textures of the thin films in the b–c plane originate from the transition of two dimensional SnSe2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm−1 K−2.
Publisher
Nature Publishing Group
ISSN
2041-1723
Keyword
POLYCRYSTALLINE SNSETHERMAL-CONDUCTIVITYELECTRONIC-STRUCTURETIN SELENIDEPOWER-FACTORPERFORMANCENANOCRYSTALSDISSOLUTIONTRANSPORTSPECTRA

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