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Park, Soojin
Nano-Functional Materials Lab
Research Interests
  • Block Copolymers, nanostructured materials for Lithium-Ion batteries, wearable and stretchable energy storage applications

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Fabrication of highly ordered silicon pin-in-a-hole nanostructures via chemical etching of nanopatterned polymer masks

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Title
Fabrication of highly ordered silicon pin-in-a-hole nanostructures via chemical etching of nanopatterned polymer masks
Author
Park, HyungminChoi, SinhoLee, Jung-PilPark, Soojin
Keywords
Anti-reflection; Chemical etching; Chemical-etching process; Etching time; Novel structures; Polymer masks; Polymer nanotubes; Polymer spheres; Rayleigh instability; Silicon Nanowires; Specular reflectance; Three orders of magnitude
Issue Date
2011-08
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.21, no.32, pp.11996 - 12000
Abstract
We present a new technique to fabricate a highly ordered silicon pin-in-a-hole structure, in which each silicon nanowire is pinned in a hole, by combining polymer sphere arrays induced by Rayleigh instability with chemical etching process. With this process, we were able to create the novel structures that are periodic over very large areas (3 x 3 cm(2)), where the length of silicon nanowires can be varied by tuning the etching time. A silicon pin-in-a-hole structure was used as the template for preparing polymer nanotubes. And also these structures exhibited a superior anti-reflection property showing specular reflectance of about 0.2%, nearly three orders of magnitude lower than that of a planar silicon wafer.
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DOI
10.1039/c1jm10812c
ISSN
0959-9428
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ECHE_Journal Papers
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