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정건욱

Chung, Kunook
Mixed Dimensional Materials and Devices Lab.
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Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods

Author(s)
Kim, Min HwaChung, KunookMoon, Dae YoungJeon, Jong-MyeongKim, MiyoungPark, JinsubNanishi, YasushiYi, Gyu-ChulYoon, Euijoon
Issued Date
2012-02
DOI
10.1166/jnn.2012.4698
URI
https://scholarworks.unist.ac.kr/handle/201301/26383
Fulltext
https://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000002/art00157;jsessionid=21fbwctb5r36r.x-ic-live-01
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.2, pp.1645 - 1648
Abstract
We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 degrees C, complete InN nanorods with typical diameters of 150 nm and length of similar to 3.5 mu m were grown with hexagonal facets. theta-2 theta X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al2O3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along < 0001 > with (10-10) facets.
Publisher
AMER SCIENTIFIC PUBLISHERS
ISSN
1533-4880
Keyword (Author)
InN NanorodCatalyst-FreeMetal-Organic Chemical Vapor Deposition (MOCVD)
Keyword
NANOWIRESDEVICESGANZNO

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