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최영빈

Tchoe, Youngbin
Neural Interfaces and Semiconductor Optoelectronics Lab
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Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

Author(s)
Lee, KeundongTchoe, YoungbinYoon, HosangBaek, HyeonjunChung, KunookLee, SangikYoon, ChansooPark, Bae HoYi, Gyu-Chul
Issued Date
2016-06
DOI
10.1038/srep27451
URI
https://scholarworks.unist.ac.kr/handle/201301/26372
Fulltext
https://www.nature.com/articles/srep27451
Citation
SCIENTIFIC REPORTS, v.6, pp.27451
Abstract
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in 'reading' and 'writing' operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emission from our hybrid device. In contrast to former studies, we found that minor CFs were formed earlier than major CF contributing to the resistive switching. Moreover, we investigated the substitution of a stressed major CF with a fresh minor CF when large fluctuation of operation voltage appeared after more than 50 times of resistive switching in atmospheric condition. Our results present an advancement in the understanding of ReRAM operation mechanism, and a step toward stabilizing the fluctuations in ReRAM switching parameters.
Publisher
NATURE PUBLISHING GROUP
ISSN
2045-2322
Keyword
MEMORIES

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