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Sohn, Chang Hee
Laboratory for Unobtainable Functional Oxides
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Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch

Author(s)
Guo, Er-JiaLiu, YaohuaSohn, ChangheeDesautels, Ryan D.Herklotz, AndreasLiao, ZhaoliangNichols, JohnFreeland, John W.Fitzsimmons, Michael R.Lee, Ho Nyung
Issued Date
2018-04
DOI
10.1002/adma.201705904
URI
https://scholarworks.unist.ac.kr/handle/201301/26285
Fulltext
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201705904
Citation
ADVANCED MATERIALS, v.30, no.15, pp.1705904
Abstract
Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (V-O) formed in LaNiO3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the V-O concentration in LNO significantly modifies the degree of orbital polarization and drives the metal-insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X-ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional-control the oxygen flow across the heterointerface, e.g., a so-called oxygen diode, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword (Author)
ionic rectificationnickelatesorbital polarizationoxygen diodeoxygen vacancies
Keyword
DENSITY-FUNCTIONAL THEORYOXIDE INTERFACESINDUCED MAGNETISMFORMATION ENERGYELECTRON-GASTHIN-FILMSPEROVSKITESVACANCYLANIO3DIFFUSION

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