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Jeong, Hu Young
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Ferroelectric Polarization Rotation in Order-Disorder-Type LiNbO3 Thin Films

Author(s)
Yoo, Tae SupLee, Sang ARoh, ChangjaeKang, SeunghunSeol, DaeheeGuan, XinweiBae, Jong-SeongKim, JiwoongKim, Young-MinJeong, Hu YoungJeong, SeunggyoMohamed, Ahmed YousefCho, Deok-YongJo, Ji YoungPark, SungkyunWu, TomKim, YunseokLee, JongseokChoi, Woo Seok
Issued Date
2018-12
DOI
10.1021/acsami.8b12900
URI
https://scholarworks.unist.ac.kr/handle/201301/25551
Fulltext
https://pubs.acs.org/doi/10.1021/acsami.8b12900
Citation
ACS APPLIED MATERIALS & INTERFACES, v.10, no.48, pp.41471 - 41478
Abstract
The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder-type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.
Publisher
AMER CHEMICAL SOC
ISSN
1944-8244
Keyword (Author)
ferroelectric polarization rotationLiNbO3 thin filmssecond harmonic generationspatial inversion symmetry breakingvacancy engineering
Keyword
PIEZOELECTRIC RESPONSELITHIUM-NIOBATEBUFFER LAYERPHASECRYSTALORIGINGROWTH

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