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Yang, Changduk
Advanced Tech-Optoelectronic Materials Synthesis Lab.
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An Ultrahigh Mobility in Isomorphic Fluorobenzo[c]-[1,2,5]thiadiazole-Based Polymers

Author(s)
Lee, JunghoonKang, So-HueiLee, Sang MyeonLee, Kyu CheolYang, HeesooCho, YongjoonHan, DaeheeLi, YongfangLee, Byoung HoonYang, Changduk
Issued Date
2018-10
DOI
10.1002/anie.201808098
URI
https://scholarworks.unist.ac.kr/handle/201301/25089
Fulltext
https://onlinelibrary.wiley.com/doi/abs/10.1002/anie.201808098
Citation
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.57, no.41, pp.13629 - 13634
Abstract
To understand the effects rendered on the relevant basic physical properties and device function by controlling the regiochemistry of the cyclopenta[1,2-b:5,4-b'] dithiophene-fluorobenzo[c][1,2,5] thiadiazole polymer (hereafter referred to as the CDT-FBT polymer), two polymers, the regiorandom polymer (RA) and regioregular version (RR), respectively, are synthesized and characterized. In addition, an efficient route for synthesizing a key monomer for RR using various synthesis scope and optimizing the reaction conditions is discussed. Although RA exhibits optical, electrochemical, and morphological properties similar to RR, it shows better field-effect transistor (FET) performance. Surprisingly, by employing a capillarity-mediated sandwich-casting process on a nano-grooved substrate, an unprecedented mobility of 17.8 cm(2) V-1 s(-1) is obtained for RA-based FETs; this mobility value is almost twofold greater than those of the corresponding RR-based FETs. For the first time, this study challenges previously reported results in that high carrier mobility is related to the high degree of polymer order induced by the backbone regioregularity.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
1433-7851
Keyword (Author)
cyclopentadithiophenefluoro-benzothiadiazoleorganic field-effect transistorspolymer chemistryregioregularity
Keyword
FIELD-EFFECT TRANSISTORSLARGE-AREA ELECTRONICSTHIN-FILM TRANSISTORSOPEN-CIRCUIT VOLTAGECONJUGATED POLYMERSEMICONDUCTING POLYMERSSOLAR-CELLSFLUORINE SUBSTITUTIONORGANIC TRANSISTORSAMORPHOUS-SILICON

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