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Lee, Zonghoon
Atomic-Scale Electron Microscopy Lab.
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High-Performance Gas Sensor Using a Large-Area WS2xSe2-2x Alloy for Low-Power Operation Wearable Applications

Author(s)
Ko, Kyung YongLee, SangyoonPark, KyunamKim, YoungjunWoo, Whang JeKim, DonghyunSong, Jeong-GyuPark, JusangKim, Jung HwaLee, ZonghoonKim, Hyungjun
Issued Date
2018-10
DOI
10.1021/acsami.8b10455
URI
https://scholarworks.unist.ac.kr/handle/201301/25082
Fulltext
https://pubs.acs.org/doi/10.1021/acsami.8b10455
Citation
ACS APPLIED MATERIALS & INTERFACES, v.10, no.40, pp.34163 - 34171
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted considerable attention as promising building blocks for a new generation of gas-sensing devices because of their excellent electrical properties, superior response, flexibility, and low-power consumption. Owing to their large surface-to-volume ratio, various 2D TMDCs, such as MoS2, MoSe2, WS2, and WSe2, have exhibited excellent gas-sensing characteristics. However, exploration toward the enhancement of TMDC gas-sensing performance has not yet been intensively addressed. Here, we synthesized large-area uniform WS2xSe2-2x alloys for room-temperature gas sensors. As-synthesized WS2xSe2-2x alloys exhibit an elaborative composition control owing to their thermodynamically stable sulfurization process. Further, utilizing uniform WS2xSe2-2x alloys over a large area, we demonstrated improved NO2-sensing performance compared to WSe2 on the basis of an electronic sensitization mechanism. The WS0.96Se1.04 alloy gas sensor exhibits 2.4 times enhanced response for NO2 exposure. Further, we demonstrated a low-power wearable NO2-detecting wristband that operates at room temperature. Our results show that the proposed method is a promising strategy to improve 2D TMDC gas sensors and has a potential for applications in advanced gas-sensing devices.
Publisher
AMER CHEMICAL SOC
ISSN
1944-8244
Keyword (Author)
transition-metal dichalcogenide alloygas sensorselectronic sensitizationlow-power operationwearable application
Keyword
FIELD-EFFECT TRANSISTORSMONO LAYER MOS2SENSING PROPERTIESMONOLAYERWSE2NANOSHEETSMOLECULESSNO2FUNCTIONALIZATIONPHOTOTRANSISTORS

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