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Lee, Geunsik
Computational Research on Electronic Structure and Transport in Condensed Materials
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Effects of impurity adsorption on topological surface states of Bi2Te3

Author(s)
Shati, KhaqanFarhan, M. ArshadChandrasekaran, S. SelvaShim, Ji HoonLee, Geunsik
Issued Date
2017-08
DOI
10.1209/0295-5075/119/47001
URI
https://scholarworks.unist.ac.kr/handle/201301/22901
Fulltext
https://epljournal.edpsciences.org/articles/epl/abs/2017/16/epl18758/epl18758.html
Citation
EPL, v.119, no.4, pp.47001
Abstract
Electronic structures of Bi2Te3 with adsorption of Rb, In, Ga and Au atoms are studied by using the first-principle method, focusing on the effect of non-magnetic impurities on the topologically protected surface states. Upon monolayer formation, the bulk conduction band is moved down to the Fermi level with a significant Rashba splitting due to n-doping behavior with band modification details depending on the adatom chemistry. Our study shows the robustness of the intrinsic spin-momentum coupled surface band and emergence of a new similar one, which could provide helpful insight for developing novel spintronic devices.
Publisher
EDP Sciences
ISSN
1286-4854
Keyword
SINGLE DIRAC CONEINSULATOR

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