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Study on correlation of thicknesses of transparent electrodes and performance of silicon heterojunction solar cells

Author(s)
Oh, Joon-HoChoi, In-WooSong, Hee-EunKim, Ka-Hyun
Issued Date
2017-05
DOI
10.1166/jnn.2017.14100
URI
https://scholarworks.unist.ac.kr/handle/201301/21835
Fulltext
http://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000005/art00115;jsessionid=4a206qmvsmj3u.x-ic-live-03
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3500 - 3503
Abstract
We investigated the effects of the thicknesses of indium tin oxide (ITO) transparent conducting oxide films on the device performance of silicon heterojunction solar cells. It was observed that the fill factor of the solar cells significantly decreased from 70.9 to 59.4% with increasing ITO thicknesses from 66 to 93 nm, leading to a decrease in solar conversion efficiency. As the thickness of ITO films increased, the Voc × FF products of solar cells decreased, even though the FOM (Figure-Of-Merit) of the ITO films monotonically increased. The degradation effects could not be fully recovered, even after annealing, which overwhelmed the effect of improved FOM on thicker ITO films. This effect will be discussed based upon the role of sputter induced damage for the deteriorated MCLT (minority carrier lifetime) and implied Voc of the p-a-Si:H/i-a-Si:H/n-c-Si/i-a-Si:H/n-a-Si:H structures.
Publisher
AMER SCIENTIFIC PUBLISHERS
ISSN
1533-4880
Keyword (Author)
SiliconHeterojunctionInterfaceIndium Tin OxideTransparent Conducting Oxide
Keyword
INTERFACEOXIDE

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