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Lee, Geunsik
Computational Research on Electronic Structure and Transport in Condensed Materials
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Electronic transport across metal-graphene edge contact

Author(s)
Gong, ChengZhang, ChenxiOh, Young JunWang, WeichaoLee, GeunsikShan, BinWallace, Robert M.Cho, Kyeongjae
Issued Date
2017-06
DOI
10.1088/2053-1583/aa5c9d
URI
https://scholarworks.unist.ac.kr/handle/201301/21570
Fulltext
http://iopscience.iop.org/article/10.1088/2053-1583/aa5c9d
Citation
2D MATERIALS, v.4, no.2, pp.025033
Abstract
The electronic transport across metal-graphene edge-contact structures is studied by first principles methods. Unusual double-dip transmission as a function of Fermi level is found for a Pd electrode over varying grapheme lengths. Interface metal-carbon hybridization is shown to introduce random distribution of pi-orbital local density of states at different carbon sites leading to transmission suppression. For a Ti electrode, two dips are merged into one with a similar to 0.2 eV transport gap opening. Our work sheds light on the origin of intrinsic contact resistance at metal-graphene edge contact.
Publisher
IOP PUBLISHING LTD
ISSN
2053-1583
Keyword (Author)
metal-grapheneedge contactelectronic transport

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