dc.citation.number |
8 |
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dc.citation.startPage |
084506 |
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dc.citation.title |
JOURNAL OF APPLIED PHYSICS |
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dc.citation.volume |
115 |
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dc.contributor.author |
Chang, Jiwon |
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dc.contributor.author |
Register, Leonard F. |
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dc.contributor.author |
Banerjee, Sanjay K. |
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dc.date.accessioned |
2023-12-22T03:06:36Z |
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dc.date.available |
2023-12-22T03:06:36Z |
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dc.date.created |
2017-02-08 |
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dc.date.issued |
2014-02 |
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dc.description.abstract |
We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs. |
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dc.identifier.bibliographicCitation |
JOURNAL OF APPLIED PHYSICS, v.115, no.8, pp.084506 |
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dc.identifier.doi |
10.1063/1.4866872 |
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dc.identifier.issn |
0021-8979 |
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dc.identifier.scopusid |
2-s2.0-84896789926 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/21323 |
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dc.identifier.url |
http://aip.scitation.org/doi/10.1063/1.4866872 |
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dc.identifier.wosid |
000332619600085 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scie |
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dc.description.journalRegisteredClass |
scopus |
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