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Jeong, Hu Young
UCRF Electron Microscopy group
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Laser-induced phase separation of silicon carbide

Author(s)
Choi, InsungJeong, Hu YoungShin, HyeyoungKang, GyeongwonByun, MyunghwanKim, HyungjunChitu, Adrian M.Im, James S.Ruoff, Rodney S.Choi, Sung-YoolLee, Keon Jae
Issued Date
2016-11
DOI
10.1038/ncomms13562
URI
https://scholarworks.unist.ac.kr/handle/201301/21026
Fulltext
http://www.nature.com/articles/ncomms13562
Citation
NATURE COMMUNICATIONS, v.7, pp.13562
Abstract
Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.
Publisher
NATURE PUBLISHING GROUP
ISSN
2041-1723
Keyword
MOLECULAR-DYNAMICSCRYSTALLIZATIONABLATIONFILMS

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