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Yang, Changduk
Advanced Tech-Optoelectronic Materials Synthesis Lab (ATOMS)
Research Interests
  • Optoelectronic materials synthesis/organic electronics, functionalization of carbonaceous solids, advanced materials chemistry, macromolecular chemistry

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Ultra-narrow-bandgap thienoisoindigo polymers: structure-property correlations in field-effect transistors

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Title
Ultra-narrow-bandgap thienoisoindigo polymers: structure-property correlations in field-effect transistors
Author
Kim, GyoungsikKim, HyoeunJang, MoonjeongJung, Yun KyungOh, Joon HakYang, Changduk
Issue Date
2016-10
Publisher
ROYAL SOC CHEMISTRYROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.40, pp.9554 - 9560
Abstract
From a structural point of view, the newly conceived thienoisoindigo (TIIG) moiety can serve as an ideal building block for the synthesis of high-performance polymers. To expand the range of available TIIG-based conjugated polymers, herein we report the synthesis and characterization of two new TIIG-based donor-acceptor polymers (PTIIG-TT and PTIIG-TVT), containing either the thieno[3,2-b] thiophene (TT) or the (E)-2-(2-(thiophen-2-yl) vinyl) thiophene (TVT) moiety. In addition, we conducted a systematic investigation on the relationship between the microstructure of the polymer film and charge transport in organic field-effect transistors (OFETs) fabricated using these polymers. It was observed that the incorporation of a TVT moiety into the TIIG backbone imparts higher crystallinity and increases the molecular packing density, leading to an increased hole mobility (similar to 0.45 cm(2) V-1 s(-1)) in PTIIG-TVT, compared with PTIIG-TT. When an Al electrode is used instead of a Au electrode in the OFET devices, both polymers exhibit outstanding ambipolar characteristics. This study advances the understanding of the structural features of TIIG-based polymers, which will potentially accelerate the improvement in the mobility of TIIG-based polymers.
URI
https://scholarworks.unist.ac.kr/handle/201301/20744
URL
http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC03693G#!divAbstract
DOI
10.1039/c6tc03693g
ISSN
2050-7526
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