Ultra-narrow-bandgap thienoisoindigo polymers: structure-property correlations in field-effect transistors
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- Ultra-narrow-bandgap thienoisoindigo polymers: structure-property correlations in field-effect transistors
- Kim, Gyoungsik; Kim, Hyoeun; Jang, Moonjeong; Jung, Yun Kyung; Oh, Joon Hak; Yang, Changduk
- Issue Date
- ROYAL SOC CHEMISTRYROYAL SOC CHEMISTRY
- JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.40, pp.9554 - 9560
- From a structural point of view, the newly conceived thienoisoindigo (TIIG) moiety can serve as an ideal building block for the synthesis of high-performance polymers. To expand the range of available TIIG-based conjugated polymers, herein we report the synthesis and characterization of two new TIIG-based donor-acceptor polymers (PTIIG-TT and PTIIG-TVT), containing either the thieno[3,2-b] thiophene (TT) or the (E)-2-(2-(thiophen-2-yl) vinyl) thiophene (TVT) moiety. In addition, we conducted a systematic investigation on the relationship between the microstructure of the polymer film and charge transport in organic field-effect transistors (OFETs) fabricated using these polymers. It was observed that the incorporation of a TVT moiety into the TIIG backbone imparts higher crystallinity and increases the molecular packing density, leading to an increased hole mobility (similar to 0.45 cm(2) V-1 s(-1)) in PTIIG-TVT, compared with PTIIG-TT. When an Al electrode is used instead of a Au electrode in the OFET devices, both polymers exhibit outstanding ambipolar characteristics. This study advances the understanding of the structural features of TIIG-based polymers, which will potentially accelerate the improvement in the mobility of TIIG-based polymers.
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