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Choi, Jaehyouk
Integrated Circuits and Systems Lab (ICSL)
Research Interests
  • RF/Analog/Mixed IC design, low power CMOS IC, wired/wireless TRX IC, clock generation IC

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High-resolution, electrohydrodynamic inkjet printing of stretchable, metal oxide semiconductor transistors with high performances

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Title
High-resolution, electrohydrodynamic inkjet printing of stretchable, metal oxide semiconductor transistors with high performances
Author
Kim, S,-Y.Kim, K.Hwang, Y.H.Park, J.Jang, J.Nam, Y.Kang, Y.Kim, M.Park, H.J.Lee, ZonghoonChoi, JaehyoukKim, Y.Jeong, S.Bae, B.-S.Park, Jang-Ung
Issue Date
2016-10
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.8, no.39, pp.17113 - 17121
Abstract
As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 mu m) and superb performance, including high mobility (similar to 230 cm(2) V-1 s(-1)). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 degrees C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.
URI
https://scholarworks.unist.ac.kr/handle/201301/20632
URL
http://pubs.rsc.org/en/content/articlelanding/2016/nr/c6nr05577j#!divAbstract
DOI
10.1039/C6NR05577J
ISSN
2040-3364
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