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Robust room temperature valley polarization in monolayer and bilayer WS2

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Title
Robust room temperature valley polarization in monolayer and bilayer WS2
Author
Nayak,Pramoda K.Lin, Fan-CheongYeh, Chao-HuiHuang, Jer-ShingChiu, Po-Wen
Issue Date
2016-03
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.8, no.11, pp.6035 - 6042
Abstract
We report robust room temperature valley polarization in chemical-vapor-deposition (CVD) grown monolayer and bilayer WS2via polarization-resolved photoluminescence measurements using excitation below the bandgap. We show that excitation with energy slightly below the bandgap of the multi-valleyed transition metal chalcogenides can effectively suppress the random redistribution of excited electrons and, thereby, greatly enhance the efficiency of valley polarization at room temperature. Compared to mechanically exfoliated WS2, our CVD grown WS2 films also show enhancement in the coupling of spin, layer and valley degree of freedom and, therefore, provide improved valley polarization. At room temperature, using below-bandgap excitation and CVD grown monolayer and bilayer WS2, we have reached a record-high valley polarization of 35% and 80%, respectively, exceeding the previously reported values of 10% and 65% for mechanically exfoliated WS2 layers using resonant excitation. This observation provides a new direction to enhance valley control at room temperature. © 2016 The Royal Society of Chemistry
URI
https://scholarworks.unist.ac.kr/handle/201301/18903
URL
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C5NR08395H#!divAbstract
DOI
10.1039/c5nr08395h
ISSN
2040-3364
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