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강석주

Kang, Seok Ju
Smart Materials for Energy Lab.
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Recovery of remanent polarization of poly(vinylidene fluoride-co-trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

Author(s)
Park, Youn JungKang, Seok JuPark, CheolminWoo, EuntaekShin, KyusoonKim, Kap Jin
Issued Date
2007-05
DOI
10.1063/1.2743389
URI
https://scholarworks.unist.ac.kr/handle/201301/18490
Fulltext
http://scitation.aip.org/content/aip/journal/apl/90/22/10.1063/1.2743389
Citation
APPLIED PHYSICS LETTERS, v.90, no.22
Abstract
Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 mu C/cm(2) was obtained after annealing up to 185 degrees C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (similar to 150 degrees C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field. (C) 2007 American Institute of Physics
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword
FERROELECTRIC POLARIZATIONCOPOLYMERRECRYSTALLIZATIONTRANSISTORSDEPENDENCETRANSITIONTEMPLATESTHICKNESS

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