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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Line-defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfide

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Title
Line-defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfide
Author
Ryu, Gyeong HeeLee, JongyeongKim, Na YeonLee, YeongdongKim, YoungchanKim, Moon J.Lee, ChangguLee, Zonghoon
Issue Date
2016-03
Publisher
IOP PUBLISHING LTD
Citation
2D MATERIALS, v.3, no.1, pp.014002
Abstract
The production of hole and Mo cluster by electron beam irradiation in molybdenum disulfide (MoS2), which consists of S-Mo-S layers, is monitored over time using atomic resolution transmission electron microscopy. S vacancies are firstly formed due to knocking off of S atoms and then line defects are induced due to accumulation of S vacancies in MoS2 sheet instead of forming a hole. The line defects tend to be merged at a point and a hole is formed subsequently at the point. Mo atoms tend to be clustered discretely as a nano sheet along the edge of the hole due to difference in displacement threshold energy between Mo and S atoms under electron irradiation. After Mo clusters are nearly separated from MoS2 sheet, the clusters are transformed into body-centered cubic nanocrystal of Mo during prolonged electron beam irradiation. The line defect mediated formation of hole and Mo cluster only occurs within a single grain of monolayer MoS2 sheet.
URI
https://scholarworks.unist.ac.kr/handle/201301/18218
URL
http://iopscience.iop.org/article/10.1088/2053-1583/3/1/014002
DOI
10.1088/2053-1583/3/1/014002
ISSN
2053-1583
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