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Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science

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Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains

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Title
Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains
Author
Wu, QinkePark, Ji-HoonPark, SangwooJung, Seong JunSuh, HwansooPark, NoejungWongwiriyapan, WinaddaLee, SungjooLee, Young HeeSong, Young Jae
Issue Date
2015-11
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.5, pp.16159
Abstract
A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 mu m to more than 100 mu m) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can be selectively grown by controlling Cu-annealing time under argon atmosphere prior to h-BN growth, which provides the h-BN shape varies in triangular, trapezoidal, hexagonal and complex shapes. The uniform crystalline orientation of h-BN from different nucleation seeds can be easily confirmed by polarized optical microscopy (POM) with a liquid crystal coating. Furthermore, seamlessly merged h-BN flakes without structural domain boundaries were evidence by a selective hydrogen etching after a full coverage of a h-BN film was achieved. This seamless large-area and atomic monolayer of single crystalline h-BN film can offer as an ideal and practical template of graphene-based devices or alternative two-dimensional materials for industrial applications with scalability.
URI
https://scholarworks.unist.ac.kr/handle/201301/18118
URL
http://www.nature.com/articles/srep16159
DOI
10.1038/srep16159
ISSN
2045-2322
Appears in Collections:
PHY_Journal Papers
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